Tunable effective g factor in InAs nanowire quantum dots

M. T. Björk; A. Fuhrer; A. E. Hansen; M. W. Larsson; L. E. Fröberg; L. Samuelson

doi:10.1103/PhysRevB.72.201307

Tunable effective g factor in InAs nanowire quantum dots

M. T. Björk^*, A. Fuhrer, A. E. Hansen, M. W. Larsson, L. E. Fröberg, L. Samuelson

^*Corresponding author for this work

141 Citations (Scopus)

Abstract

We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown using chemical beam epitaxy. The values of the electron g factors of the first few electrons entering the dot are found to strongly depend on dot size. They range from close to the InAs bulk value in large dots g*=13 down to g*=2.3 for the smallest dots.

Original language	English
Article number	201307
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	20
ISSN	1098-0121
DOIs	https://doi.org/10.1103/PhysRevB.72.201307
Publication status	Published - 15 Nov 2005
Externally published	Yes

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10.1103/PhysRevB.72.201307

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title = "Tunable effective g factor in InAs nanowire quantum dots",

abstract = "We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown using chemical beam epitaxy. The values of the electron g factors of the first few electrons entering the dot are found to strongly depend on dot size. They range from close to the InAs bulk value in large dots g*=13 down to g*=2.3 for the smallest dots.",

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AU - Björk, M. T.

AU - Fuhrer, A.

AU - Hansen, A. E.

AU - Larsson, M. W.

AU - Fröberg, L. E.

AU - Samuelson, L.

PY - 2005/11/15

Y1 - 2005/11/15

N2 - We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown using chemical beam epitaxy. The values of the electron g factors of the first few electrons entering the dot are found to strongly depend on dot size. They range from close to the InAs bulk value in large dots g*=13 down to g*=2.3 for the smallest dots.

AB - We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown using chemical beam epitaxy. The values of the electron g factors of the first few electrons entering the dot are found to strongly depend on dot size. They range from close to the InAs bulk value in large dots g*=13 down to g*=2.3 for the smallest dots.

UR - https://www.scopus.com/pages/publications/29744439411

U2 - 10.1103/PhysRevB.72.201307

DO - 10.1103/PhysRevB.72.201307

M3 - Journal article

AN - SCOPUS:29744439411

SN - 1098-0121

VL - 72

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 20

M1 - 201307

ER -

Tunable effective g factor in InAs nanowire quantum dots

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