Spin relaxation in InAs nanowires studied by tunable weak antilocalization

A. E. Hansen; M. T. Björk; C. Fasth; C. Thelander; L. Samuelson

doi:10.1103/PhysRevB.71.205328

Spin relaxation in InAs nanowires studied by tunable weak antilocalization

A. E. Hansen, M. T. Björk^*, C. Fasth, C. Thelander, L. Samuelson

^*Corresponding author for this work

126 Citations (Scopus)

Abstract

We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n -type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.

Original language	English
Article number	205328
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	71
Issue number	20
ISSN	1098-0121
DOIs	https://doi.org/10.1103/PhysRevB.71.205328
Publication status	Published - 2005
Externally published	Yes

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10.1103/PhysRevB.71.205328

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title = "Spin relaxation in InAs nanowires studied by tunable weak antilocalization",

abstract = "We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n -type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.",

author = "Hansen, {A. E.} and Bj{\"o}rk, {M. T.} and C. Fasth and C. Thelander and L. Samuelson",

year = "2005",

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T1 - Spin relaxation in InAs nanowires studied by tunable weak antilocalization

AU - Hansen, A. E.

AU - Björk, M. T.

AU - Fasth, C.

AU - Thelander, C.

AU - Samuelson, L.

PY - 2005

Y1 - 2005

N2 - We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n -type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.

AB - We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n -type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.

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U2 - 10.1103/PhysRevB.71.205328

DO - 10.1103/PhysRevB.71.205328

M3 - Journal article

AN - SCOPUS:33344478702

SN - 1098-0121

VL - 71

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 20

M1 - 205328

ER -

Spin relaxation in InAs nanowires studied by tunable weak antilocalization

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