Spin relaxation in InAs nanowires studied by tunable weak antilocalization

A. E. Hansen, M. T. Björk*, C. Fasth, C. Thelander, L. Samuelson

*Corresponding author for this work
125 Citations (Scopus)

Abstract

We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n -type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.

Original languageEnglish
Article number205328
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number20
ISSN1098-0121
DOIs
Publication statusPublished - 2005
Externally publishedYes

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