Nanoscaled biological gated field effect transistors for cytogenetic analysis

D. Kwasny*, M. Dimaki, K. B. Andersen, A. Zulfiqar, Z. Tumer, W. E. Svendsen

*Corresponding author for this work
2 Citations (Scopus)

Abstract

Cytogenetic analysis is the study of chromosome structure and function, and is often used in cancer diagnosis, as many chromosome abnormalities are linked to the onset of cancer. A novel label free detection method for chromosomal translocation analysis using nanoscaled field effect transistors (FET) is presented here. The FET is gated by the hybridization of the target DNA on the semiconducting nanowire. The results show an extreme sensitivity to the hybridization process, so that the hybridization and dehybridisation can be followed in real time. The nanoscaled FET is made of polysilicon using standard UV lithography enabling batch processing of the sensors.

Original languageEnglish
Title of host publication9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
Number of pages5
PublisherInstitute of Electrical and Electronics Engineers Inc.
Publication date23 Sept 2014
Pages130-134
Article number6908775
ISBN (Electronic)9781479947270
DOIs
Publication statusPublished - 23 Sept 2014
Event9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 - Waikiki Beach, United States
Duration: 13 Apr 201416 Apr 2014

Conference

Conference9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
Country/TerritoryUnited States
CityWaikiki Beach
Period13/04/201416/04/2014
SponsorChinese International NEMS Society (CINS), City University of Hong Kong, et al., IEEE Nanotechnology Council, University of California , University of Hawai'i
Series9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

Keywords

  • chromosome translocations
  • DNA biosensor
  • silicon nanowires

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