Spin relaxation in InAs nanowires studied by tunable weak antilocalization

A. E. Hansen; M. T. Björk; C. Fasth; C. Thelander; L. Samuelson

doi:10.1103/PhysRevB.71.205328

Spin relaxation in InAs nanowires studied by tunable weak antilocalization

A. E. Hansen, M. T. Björk^*, C. Fasth, C. Thelander, L. Samuelson

^*Corresponding author af dette arbejde

126 Citationer (Scopus)

Abstract

We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n -type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.

Originalsprog	Engelsk
Artikelnummer	205328
Tidsskrift	Physical Review B - Condensed Matter and Materials Physics
Vol/bind	71
Udgave nummer	20
ISSN	1098-0121
DOI	https://doi.org/10.1103/PhysRevB.71.205328
Status	Udgivet - 2005
Udgivet eksternt	Ja

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@article{1a035e9a63d14a67a06f7ae87583127f,

title = "Spin relaxation in InAs nanowires studied by tunable weak antilocalization",

abstract = "We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n -type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.",

author = "Hansen, {A. E.} and Bj{\"o}rk, {M. T.} and C. Fasth and C. Thelander and L. Samuelson",

year = "2005",

doi = "10.1103/PhysRevB.71.205328",

language = "English",

volume = "71",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Spin relaxation in InAs nanowires studied by tunable weak antilocalization

AU - Hansen, A. E.

AU - Björk, M. T.

AU - Fasth, C.

AU - Thelander, C.

AU - Samuelson, L.

PY - 2005

Y1 - 2005

N2 - We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n -type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.

AB - We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n -type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.

UR - http://www.scopus.com/inward/record.url?scp=33344478702&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.71.205328

DO - 10.1103/PhysRevB.71.205328

M3 - Journal article

AN - SCOPUS:33344478702

SN - 1098-0121

VL - 71

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 20

M1 - 205328

ER -

Spin relaxation in InAs nanowires studied by tunable weak antilocalization

Abstract

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