Semiconductor nanowires for OD and ID physics and applications

L. Samuelson*, C. Thelander, M. T. Björk, M. Borgström, K. Deppert, K. A. Dick, A. E. Hansen, T. Mårtensson, N. Panev, A. I. Persson, W. Seifert, N. Skold, M. W. Larsson, L. R. Wallenberg

*Corresponding author af dette arbejde
167 Citationer (Scopus)

Abstract

During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize.

OriginalsprogEngelsk
TidsskriftPhysica E: Low-Dimensional Systems and Nanostructures
Vol/bind25
Udgave nummer2-3 SPEC.ISS.
Sider (fra-til)313-318
Antal sider6
ISSN1386-9477
DOI
StatusUdgivet - nov. 2004
Udgivet eksterntJa

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