Nanoscaled biological gated field effect transistors for cytogenetic analysis

D. Kwasny*, M. Dimaki, K. B. Andersen, A. Zulfiqar, Z. Tumer, W. E. Svendsen

*Corresponding author af dette arbejde
2 Citationer (Scopus)

Abstract

Cytogenetic analysis is the study of chromosome structure and function, and is often used in cancer diagnosis, as many chromosome abnormalities are linked to the onset of cancer. A novel label free detection method for chromosomal translocation analysis using nanoscaled field effect transistors (FET) is presented here. The FET is gated by the hybridization of the target DNA on the semiconducting nanowire. The results show an extreme sensitivity to the hybridization process, so that the hybridization and dehybridisation can be followed in real time. The nanoscaled FET is made of polysilicon using standard UV lithography enabling batch processing of the sensors.

OriginalsprogEngelsk
Titel9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
Antal sider5
ForlagInstitute of Electrical and Electronics Engineers Inc.
Publikationsdato23 sep. 2014
Sider130-134
Artikelnummer6908775
ISBN (Elektronisk)9781479947270
DOI
StatusUdgivet - 23 sep. 2014
Begivenhed9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 - Waikiki Beach, USA
Varighed: 13 apr. 201416 apr. 2014

Konference

Konference9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
Land/OmrådeUSA
ByWaikiki Beach
Periode13/04/201416/04/2014
SponsorChinese International NEMS Society (CINS), City University of Hong Kong, et al., IEEE Nanotechnology Council, University of California, University of Hawaii
Navn9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

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